| PART |
Description |
Maker |
| MB84SF6H6H6L2-70 MB84SF6H6H6L2-70PBS |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
Spansion Inc.
|
| MB84VD23381HJ-70 MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Advanced Micro Devices
|
| MB82DBS04163C MB82DBS04163C-70L MB82DBS04163C-70LW |
MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word】16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
| MB81EDS516545 |
MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| MB81ES171625-15WFKT-X MB81ES173225-15WFKT-X |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 单数据传输速率女的FCRAM消费/嵌入式SIP应用程序特定的内
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 512K X 32 SYNCHRONOUS DRAM, 12 ns, UUC84
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| MB82DBS02163E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| MB84VD22398EJ-90 MB84VD22398EJ-85 MB84VD2239XEJ-85 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
| MB82DP04183C MB82DP04183C-65LWFKT MBR0520LT1G SN54 |
64M Bit (4 M word ??16 bit) Mobile Phone Application Specific Memory
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
Surface Mount Schottky Power Rectifier Plastic SOD?123 Package
18-BIT BUS-INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS
|
Fujitsu Media Devices Limited
ONSEMI
TI
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| AM49PDL129AH70IT AM49PDL129AH61IT AM49PDL129AH61IS |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
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SAMSUNG SEMICONDUCTOR CO. LTD.
|
